منابع مشابه
Nand Gate Using Finfet for Nanoscale Technology
ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...
متن کاملPerformance Improvement of FinFET using Nitride Spacer
The Double Gate FinFET has been designed for 90nm as an alternative solution to bulk devices. The FinFET with independent gate (IDG) structure is designed to control Vth. When the Vth is controlled the leakage current can be decreased by improving its current driving capability. The metal used for the front gate and back gate is TiN. Here the device performance is compared using nitride spacer ...
متن کاملUltra Wide Band Vco Using Cmos Technology
ULTRA WIDE BAND VCO USING CMOS TECHNOLOGY Seema Malik, Mr. Sunil Kumar M.Tech (VLSI Design), Banasthali University, Banasthali, Jaipur, Rajasthan, INDIA 2 Scientist (Agriculture Statistics), Project Directorate for Farming System Research, Modipuram, Meerut (U.P) 250-110, INDIA ___________________________________________________________________________________ Abstract: Ultra wideband (UWB) wir...
متن کاملModelling of integrated VCO resonators using Momentum
This paper will demonstrate the use of momentum to model on chip spiral inductors and transmission lines. The simulation results will be compared with measured data on these structures. These modeling techniques will be extended to include an on chip balun. A method of converting the results will be given so that compact efficient models can be created that can be included in any time domain or...
متن کاملMicro-Power FinFET RF Front-End for Embedded Wireless Systems
A micro-power RFIC front-end, a low-noise amplifier (LNA) combined with a voltage controlled oscillator (VCO), has been designed using FinFET BSIMSOI model, which is developed for all FinFET transistors fabricated at the SPAWAR system center. The LNA power consumption is 26 μW at 0.5V supply and the VCO power consumption is 29 μW at 0.5V supply.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Indian Journal of Science and Technology
سال: 2015
ISSN: 0974-5645,0974-6846
DOI: 10.17485/ijst/2015/v8is2/67807